Learn how to develop your SiC MOSFET in one day!
The Organizing Committee of ECSCRM 2016 is proud to announce the holding of the Tutorial Day, on the arguably hottest topic of power semiconductors: SiC MOSFETs, their operation principle, their fabrication details, their reliability, their applications, markets, and future developments.
The committee for the Tutorial Day strived for finding the best experts in industry and academia to teach, to give insight into the world of SiC MOSFETs. The Tutorial Day will be an excellent introduction to graduate students in the field, but also to experienced professionals who wish to learn about the latest developments in SiC MOSFET technology.
The committee wishes the attendees and the presenters of the Tutorial Day a fruitful and enlightening event. We further hope that the present Tutorial handouts will be a precious compendium for future reference.
Tutorial Organizing Committee
|M. Bucher||Technical University of Crete, Chania, Greece|
|P. Friedrichs||Infineon, Germany|
|K. Vasilevskiy||Newcastle University, Newcastle upon Tyne, UK|
|K. Zekentes||Foundation for Research and Technology, Heraklion, Greece|
Tutorial Day Sunday, 25 Sept. 2016
Tutorial Title: Learn how to develop your SiC MOSFET in one day!
|08:45-09:00||Prof Matthias Bucher
Technical University of Crete, Greece
|09:00-10:10||Prof James Cooper
Purdue University, USA
|SiC MOSFET device physics and design (operation principles, charge model, TCAD simulation)|
|10:25-11:25||Prof Tsunenobu Kimoto
Kyoto University, Japan
|Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods)|
|11:25-12:15||Dr Victor Veliadis
|Other MOSFET processing (ohmic contacts, implantation, passivation, specific issues related to device geometry,…)|
|13:30-14:30||Prof. Sima Dimitrijev
Griffith University, Australia
|Physics and technology of SiO2/SiC interface|
|14:30-15:30||Prof Alberto Castellazzi
Nottingham University, UK
|SiC MOSFET electrical static and dynamic characterization, electrical stresses, device reliability|
|15:45-16:30||Rahul Chokhawala, MSc.
|SiC MOSFET as circuit components – targeted applications|
|16:30-17:00||Dr Scott Allen
|Summarizing remarks (evolution of SiC MOSFETs – main open points)|
Please note there is separate registration to attend the tutorial. The registration fee is €60 for ECSCRM 2016 participants, and €200 for non-participants. The registration fee for students* is €60, regardless of ECSCRM 2016 registration. The fee covers lectures, tutorial materials, as well as lunch and coffee breaks on tutorial day. Registration and payment can be made through the participant’s my·ecscrm account, along with the conference registration procedure.
Non-participants should proceed directly to the payment page, without registering for the tutorial day.
* Student status will be recognized only to PhD and Master students. Post-docs are kindly requested to register as regular participants. Students must provide evidence of their status by sending a student certificate or a copy of a valid student ID to the conference secretariat upon registration.