Tutorial Day

Learn how to develop your SiC MOSFET in one day!

The Organizing Committee of ECSCRM 2016 is proud to announce the holding of the Tutorial Day, on the arguably hottest topic of power semiconductors: SiC MOSFETs, their operation principle, their fabrication details, their reliability, their applications, markets, and future developments.

The committee for the Tutorial Day strived for finding the best experts in industry and academia to teach, to give insight into the world of SiC MOSFETs. The Tutorial Day will be an excellent introduction to graduate students in the field, but also to experienced professionals who wish to learn about the latest developments in SiC MOSFET technology.

The committee wishes the attendees and the presenters of the Tutorial Day a fruitful and enlightening event. We further hope that the present Tutorial handouts will be a precious compendium for future reference.

Tutorial Organizing Committee

M. Bucher Technical University of Crete, Chania, Greece
P. Friedrichs Infineon, Germany
K. Vasilevskiy Newcastle University, Newcastle upon Tyne, UK
K. Zekentes Foundation for Research and Technology, Heraklion, Greece

Tutorial Day Sunday, 25 Sept. 2016


Tutorial Title: Learn how to develop your SiC MOSFET in one day!

Tutorial day presenters CVs

08:15-08:45 Registration
08:45-09:00 Prof Matthias Bucher
Technical University of Crete, Greece
09:00-10:10 Prof James Cooper
Purdue University, USA
SiC MOSFET device physics and design (operation principles, charge model, TCAD simulation)
10:10-10:25 Coffee break
10:25-11:25 Prof Tsunenobu Kimoto
Kyoto University, Japan
Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods)
11:25-12:15 Dr Victor Veliadis
PowerAmerica/NCSU, USA
Other MOSFET processing (ohmic contacts, implantation, passivation, specific issues related to device geometry,…)
12:15-13:30 Lunch
13:30-14:30 Prof. Sima Dimitrijev
Griffith University, Australia
Physics and technology of SiO2/SiC interface
14:30-15:30 Prof Alberto Castellazzi
Nottingham University, UK
SiC MOSFET electrical static and dynamic characterization, electrical stresses, device reliability
15:30-15:45 Coffee break
15:45-16:30 Rahul Chokhawala, MSc.
SiC MOSFET as circuit components – targeted applications
16:30-17:00 Dr Scott Allen
Wolfspeed, USA
Summarizing remarks (evolution of SiC MOSFETs – main open points)


Please note there is separate registration to attend the tutorial. The registration fee is €60 for ECSCRM 2016 participants, and €200 for non-participants. The registration fee for students* is €60, regardless of ECSCRM 2016 registration. The fee covers lectures, tutorial materials, as well as lunch and coffee breaks on tutorial day. Registration and payment can be made through the participant’s my·ecscrm account, along with the conference registration procedure.
Non-participants should proceed directly to the payment page, without registering for the tutorial day.

* Student status will be recognized only to PhD and Master students. Post-docs are kindly requested to register as regular participants. Students must provide evidence of their status by sending a student certificate or a copy of a valid student ID to the conference secretariat upon registration.

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