Plenary & Invited Speakers

Plenary Speakers

Roland Rupp

Infineon Technologies, Germany

“How to further improve the market penetration of SiC power devices?”

Munaf Rahimo

ABB Switzerland Ltd., Switzerland

“Performance evaluation and expected challenges of Silicon Carbide power MOSFETs and diodes for high voltage applications”

Invited Speakers

TOPIC: BULK GROWTH

Takeshi Mitani

AIST, Japan

“Bulk Growth of p-type 4H-SiC Crystals from Si-C-Al solution”

TOPIC: EPITAXY

Gabriel Ferro

Université Claude Bernard, France

“3C-SiC heteroepitaxy on various substrates”

TOPIC: CHARACTERIZATION

Ian Booker

Kyoto University, Japan

Device-relevant and processing induced deep level traps and recombination centers in 4H-SiC

Akifumi Iijima

Kyoto University, Japan,

“Correlation between Shapes of Shockley Stacking Faults and Structure of Basal Plane Dislocations in 4H-SiC Epilayers”

Takeshi Ohshima

National Institutes for Quantum and Radiological Science and Technology, Japan

“Creation and functionalization of defects in SiC by irradiation and thermal treatment”

TOPIC: PROCESSING

Rebecca Cheung

University of Edinburgh, UK

“Silicon Carbide Micro-resonators”

TOPIC: MOS PROCESSING

Takuji Hosoi

Osaka University, Japan

“Ultrahigh-temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties”

Hiroshi Yano

University of Tsukuba, Japan

“Threshold voltage instability in 4H-SiC MOSFETs with phosphorus-doped and nitridated gate oxides”

TOPIC: POWER DEVICES & CIRCUITS

Shiro Hino

Mitsubishi Electric Corporation, Japan

“Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode”

Mikael Ostling

KTH, Sweden

“New developments in the field of SiC based BJTs. Comparison of SiC BJTs with SiC MOSFETs in terms of performance and suitability for various applications”

Dimosthenis Peftitsis

Norwegian University of Science and Technology, Norway

“Challenges on drive circuit design for series-connected SiC power transistors”

TOPIC: RELATED MATERIALS

Masataka Higashiwaki

National Institute of Information and Communications Technology, Japan

“Galliumoxide – a new candidate for future high power semiconductor – status and potential”

TOPIC: NOVEL APPLICATIONS

Valérie Stambouli

MINATEC, France

“Functionalisation of SiC NanoWire Field Effect Transistors (NWFETs) for advanced biosensor applications”

Invited Posters

András Csóré

Budapest University of Technology and Economics, Hungary

“Density functional theory study on NV center in 4H-SiC”

Ling Guo

SHOWA DENKO K.K. Business Development Center, Japan

“Evaluation and reduction of epitaxial wafer defects resulting from carbon-inclusion defects in 4H-SiC substrate ”

Takeyoshi Masuda

Nation Institute of Advanced Industrial Science and Technology, Japan

“0.97 mΩcm2 / 820 V 4H-SiC Super Junction V-groove Trench MOSFET”

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